ST SCT50N120
P/N: SCT50N120
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
MOS (Metal-Oxide-Semiconductor) devices and transistors are fundamental components in modern electronics, enabling the control and amplification of electrical signals. Widely used in circuits, MOSFETs offer high efficiency, fast switching, and low power consumption, making them essential for applications ranging from consumer electronics to industrial systems and power management solutions.
P/N: SCT50N120
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
P/N: SCTH35N65G2V-7AG
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25
P/N: SCT3017ALHRC11
碳化硅MOSFET 650V 118A 427W SIC 17mOhm TO-247N
P/N: C3M0032120D
碳化硅MOSFET 1.2kV 32mOHMS G3 SiC MOSFET
P/N: BZX84C5V1TS-7-F
稳压二极管 200mW 5.1V Zener