ST SCT50N120
Part Number:
SCT50N120
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
Electrical Specifications
| Parameter | Value |
|---|---|
| 通道数量: | 1 Channel |
| Vds-漏源极击穿电压: | 1.2 kV |
| Id-连续漏极电流: | 65 A |
| Rds On-漏源导通电阻: | 52 mOhms |
| Vgs - 栅极-源极电压: | - 10 V, + 25 V |
| Vgs th-栅源极阈值电压: | 1.8 V |
| Qg-栅极电荷: | 122 nC |
| 最小工作温度: | - 55 C |
| 最大工作温度: | + 200 C |