ST SCT50N120
Part Number:
SCT50N120
็ขณๅ็ก MOSFET Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
Electrical Specifications
| Parameter | Value |
|---|---|
| ้้ๆฐ้: | 1 Channel |
| Vds-ๆผๆบๆๅป็ฉฟ็ตๅ: | 1.2 kV |
| Id-่ฟ็ปญๆผๆ็ตๆต: | 65 A |
| Rds On-ๆผๆบๅฏผ้็ต้ป: | 52 mOhms |
| Vgs - ๆ ๆ-ๆบๆ็ตๅ: | - 10 V, + 25 V |
| Vgs th-ๆ ๆบๆ้ๅผ็ตๅ: | 1.8 V |
| Qg-ๆ ๆ็ต่ท: | 122 nC |
| ๆๅฐๅทฅไฝๆธฉๅบฆ: | - 55 C |
| ๆๅคงๅทฅไฝๆธฉๅบฆ: | + 200 C |