Product Details
ST SCTH35N65G2V-7AG

ST SCTH35N65G2V-7AG

Part Number: SCTH35N65G2V-7AG

碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25

Electrical Specifications

Parameter Value
通道数量: 1 Channel
Vds-漏源极击穿电压: 650 V
Id-连续漏极电流: 45 A
Rds On-漏源导通电阻: 67 mOhms
Vgs - 栅极-源极电压: - 10 V, + 22 V
Vgs th-栅源极阈值电压: 5 V
Qg-栅极电荷: 73 nC
最小工作温度: - 55 C
最大工作温度: + 175 C

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