ST SCTH35N65G2V-7AG
Part Number:
SCTH35N65G2V-7AG
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25
Electrical Specifications
| Parameter | Value |
|---|---|
| 通道数量: | 1 Channel |
| Vds-漏源极击穿电压: | 650 V |
| Id-连续漏极电流: | 45 A |
| Rds On-漏源导通电阻: | 67 mOhms |
| Vgs - 栅极-源极电压: | - 10 V, + 22 V |
| Vgs th-栅源极阈值电压: | 5 V |
| Qg-栅极电荷: | 73 nC |
| 最小工作温度: | - 55 C |
| 最大工作温度: | + 175 C |